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Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition

https://doi.org/10.1103/PhysRevMaterials.7.094602

Biswas, Abhijit; Alvarez, Gustavo A; Li, Tao; Christiansen-Salameh, Joyce; Jeong, Eugene; Puthirath, Anand B; Iyengar, Sathvik Ajay; Li, Chenxi; Gray, Tia; Zhang, Xiang; et al (September 2023, Physical Review Materials)

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Phase Stability of Hexagonal/Cubic Boron Nitride Nanocomposites

https://doi.org/10.1021/acs.nanolett.3c01537

Biswas, Abhijit; Xu, Rui; Christiansen-Salameh, Joyce; Jeong, Eugene; Alvarez, Gustavo A; Li, Chenxi; Puthirath, Anand B; Gao, Bin; Garg, Arushi; Gray, Tia; et al (August 2023, Nano Letters)

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Properties and device performance of BN thin films grown on GaN by pulsed laser deposition

https://doi.org/10.1063/5.0092356

Biswas, Abhijit; Xu, Mingfei; Fu, Kai; Zhou, Jingan; Xu, Rui; Puthirath, Anand B.; Hachtel, Jordan A.; Li, Chenxi; Iyengar, Sathvik Ajay; Kannan, Harikishan; et al (September 2022, Applied Physics Letters)

Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band x-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy, and Raman) and microscopic (atomic force microscopy and scanning transmission electron microscopy) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that the BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (∼234 V) as compared to GaN (∼168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step toward bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics.
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